Dr. Avinash (Avi) Kashyap is the VP & GM of the Discrete & Wide Bandgap Power BU at Renesas Electronics. He leads a global organization, responsible for P&L, engineering, marketing, applications and revenue generation of power devices incl. SiC, IGBTs, MOSFETs and GaN for the automotive and industrial markets.

Prior to his current role, he was Director of Silicon Carbide and Power Discretes at Microchip Technology where he led engineering and marketing groups focused on product lines that included SiC & Si FETs and diodes, rad-hard devices and RF power switches.

Previously, Dr. Kashyap was leading several power device programs at the GE Global Research Center in Niskyuna, NY. He has been involved in the development of SiC technology since its infancy for 2 decades including pioneering work on compact modeling, SiC integrated circuits and radiation-hardened devices. He has authored more than 35 peer-reviewed publications and has over 20 patents granted or pending. Dr. Kashyap holds an MS & PhD in electrical engineering from the University of Arkansas, Fayetteville. He is a senior member of the IEEE and a member of the Arkansas Academy of Electrical Engineers.

‍

‍

‍